PART |
Description |
Maker |
HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
|
Mitel Semiconductor MITEL[Mitel Networks Corporation]
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
2SK630 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK845 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1612 |
Drain Current ?ID=3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1601 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1602 |
Drain Current ?ID= 2.8A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1460 |
Drain Current ?ID=3.5A@ TC=25C
|
Inchange Semiconductor ...
|
2N80 |
Drain Current ID= 2.4A@ TC=25C
|
Inchange Semiconductor ...
|
2SK529 |
Drain Current ?ID=2A@ TC=25C
|
Inchange Semiconductor ...
|